Discrete Semiconductor Products

IHFW40N65R5SXKSA1

LTB

IGBT, 61 A, 1.5 V, 108 W, 650 V, 3 PINS

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Discrete Semiconductor Products

LTB

IGBT, 61 A, 1.5 V, 108 W, 650 V, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	IHFW40N65R5SXKSA1

Current - Collector (Ic) (Max) [Max]	61 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	142 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	108 W
Reverse Recovery Time (trr)	103 ns
Switching Energy	700 µJ, 1.52 mJ
Td (on/off) @ 25°C [custom]	44 ns
Td (on/off) @ 25°C [custom]	363 ns
Test Condition	15 V, 40 A, 400 V, 23.1 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Package / Case	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Mounting Type	Power - Max [Max]	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Switching Energy
INFINEON IHFW40N65R5SXKSA1	TO-247-3	2 V	650 V	Trench Field Stop	44 ns	363 ns	175 °C	-40 °C	103 ns	Through Hole	108 W	15 V 23.1 Ohm 40 A 400 V	142 nC	120 A	61 A	1.52 mJ 700 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 61 A 108 W Through Hole PG-HSIP247-3-2

Technical documentation and resources