V60DM100C-M3/I

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DIODE ARR SCHOT 100V 30A TO263AC

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Discrete Semiconductor Products

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DIODE ARR SCHOT 100V 30A TO263AC

Technical Specifications

Parameters and characteristics for this part

Specification	V60DM100C-M3/I

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	800 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), Variant, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AC (SMPD)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	860 mV

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Vishay General Semiconductor - Diodes Division V60DM100C-M3/I	860 mV	Schottky	TO-263AC (SMPD)	1 Pair Common Cathode	30 A	100 V	Surface Mount	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 Variant	800 µA	-40 °C	175 ░C

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General part information

Diode Array 1 Pair Common Cathode 100 V 30A Surface Mount TO-263-3, D2PAK (2 Leads + Tab), Variant

Technical documentation and resources