BUK7M17-80EX

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MOSFET N-CH 80V 43A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 80V 43A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M17-80EX

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2031 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	79 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Grade	Qualification	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK7M17-80EX	43 A	10 V	N-Channel	2031 pF	-55 °C	175 ░C	Surface Mount	MOSFET (Metal Oxide)	17 mOhm	Automotive	AEC-Q101	LFPAK33	80 V	20 V	29.6 nC	79 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 43A (Tc) 79W (Tc) Surface Mount LFPAK33

Technical documentation and resources