Discrete Semiconductor Products

IRLR3410TRPBF

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INFINEON

POWER MOSFET, N CHANNEL, 100 V, 17 A, 0.105 OHM, TO-252AA, SURFACE MOUNT

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IRLR3410TRPBF

Active

INFINEON

POWER MOSFET, N CHANNEL, 100 V, 17 A, 0.105 OHM, TO-252AA, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR3410TRPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IRLR3410 Series

Part	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IRLR3410TRPBF	Surface Mount	100 V	17 A	TO-252AA (DPAK)	79 W	16 V	105 mOhm	800 pF	N-Channel	2 V	4 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	34 nC	MOSFET (Metal Oxide)	175 °C	-55 °C
INFINEON IRLR3410TRLPBF	Surface Mount	100 V	17 A	TO-252AA (DPAK)	79 W	16 V	105 mOhm	800 pF	N-Channel	2 V	4 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	34 nC	MOSFET (Metal Oxide)	175 °C	-55 °C
INFINEON IRLR3410TRRPBF	Surface Mount	100 V	17 A	TO-252AA (DPAK)	79 W	16 V	105 mOhm	800 pF	N-Channel	2 V	4 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	34 nC	MOSFET (Metal Oxide)	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.53
		10	$ 0.97
		100	$ 0.65
		500	$ 0.51
		1000	$ 0.46
	Digi-Reel®	1	$ 1.53
		10	$ 0.97
		100	$ 0.65
		500	$ 0.51
		1000	$ 0.46
	N/A	7410	$ 0.69
	Tape & Reel (TR)	2000	$ 0.43
		4000	$ 0.39
		6000	$ 0.38
		10000	$ 0.38
Newark	Each (Supplied on Cut Tape)	1	$ 1.25
		10	$ 0.92
		25	$ 0.84
		50	$ 0.76
		100	$ 0.69
		250	$ 0.65
		500	$ 0.62
		1000	$ 0.55

Description

General part information

IRLR3410 Series

The IRLR3410TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques.