Discrete Semiconductor Products

AUIRGP35B60PD-E

Obsolete

IGBT 600V 60A 308W TO247AD

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Discrete Semiconductor Products

Obsolete

IGBT 600V 60A 308W TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRGP35B60PD-E

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	55 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	42 ns
Supplier Device Package	TO-247AD
Switching Energy	220 µJ, 215 µJ
Td (on/off) @ 25°C [Max]	110 ns
Td (on/off) @ 25°C [Min]	26 ns
Test Condition	22 A, 390 V, 3.3 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.55 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Supplier Device Package	IGBT Type	Reverse Recovery Time (trr)	Mounting Type	Test Condition	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Current - Collector (Ic) (Max) [Max]	Switching Energy
INFINEON AUIRGP35B60PD-E	26 ns	110 ns	TO-247AD	NPT	42 ns	Through Hole	3.3 Ohm 15 V 22 A 390 V	TO-247-3	150 °C	-55 °C	2.55 V	120 A	600 V	55 nC	60 A	215 µJ 220 µJ
INFINEON AUIRGP35B60PD	26 ns	110 ns	TO-247AC	NPT		Through Hole	3.3 Ohm 15 V 22 A 390 V	TO-247-3	150 °C	-55 °C	2.55 V	120 A	600 V	160 nC	60 A	215 µJ 220 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT NPT 600 V 60 A 308 W Through Hole TO-247AD

Technical documentation and resources