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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

IRG7PH28UD1PBF

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INFINEON

INSULATED GATE BIPOLAR GATE TRAS

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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

IRG7PH28UD1PBF

Active
INFINEON

INSULATED GATE BIPOLAR GATE TRAS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRG7PH28UD1PBF
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)100 A
Gate Charge90 nC
IGBT TypeTrench
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]115 W
Supplier Device PackageTO-247AC
Switching Energy543 µJ
Td (on/off) @ 25°C229 ns
Td (on/off) @ 25°C-
Test Condition600 V, 22 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 137$ 2.19
137$ 2.19
N/A 0$ 0.00
0$ 0.00
7222$ 2.50
7222$ 2.50

Description

General part information

IRG7PH Series

IGBT Trench 1200 V 30 A 115 W Through Hole TO-247AC

Documents

Technical documentation and resources