Discrete Semiconductor Products

IPP114N03L G

Obsolete

MOSFET N-CH 30V 30A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP114N03L G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	11.4 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case
INFINEON IPP114N03L G	20 V	1500 pF	N-Channel	30 V	175 °C	-55 °C	MOSFET (Metal Oxide)	Through Hole	30 A	11.4 mOhm	2.2 V	14 nC	PG-TO220-3	4.5 V 10 V	38 W	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.49

General part information

N-Channel 30 V 30A (Tc) 38W (Tc) Through Hole PG-TO220-3

Technical documentation and resources