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Technical Specifications
Parameters and characteristics for this part
| Specification | QS8M31TR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2 A, 3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC, 7.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF, 270 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 1.1 W |
| Rds On (Max) @ Id, Vgs | 112 mOhm, 210 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V, 2.5 V |
Pricing
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Description
General part information
QS8M31 Series
QS8M31 is complex type MOSFET(P+N) for switching application.
Documents
Technical documentation and resources