Discrete Semiconductor Products

IRFR6215TRLPBF

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POWER MOSFET, P CHANNEL, 150 V, 13 A, 0.295 OHM, TO-252AA, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 150 V, 13 A, 0.295 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR6215TRLPBF

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	295 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case
INFINEON IRFR6215TRRPBF	110 W	10 V	TO-252AA (DPAK)	66 nC	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	860 pF	150 V	295 mOhm	P-Channel	13 A	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
INFINEON IRFR6215TRLPBF	110 W	10 V	TO-252AA (DPAK)	66 nC	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	860 pF	150 V	295 mOhm	P-Channel	13 A	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

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