Discrete Semiconductor Products

MPS6519 TRA TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 4.0PF

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 4.0PF

Technical Specifications

Parameters and characteristics for this part

Specification	MPS6519 TRA TIN/LEAD

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	1.5 W
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp MPS6519 TRA TIN/LEAD	150 °C	-65 °C	25 V	1.5 W	TO-92	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	50 nA	Through Hole	100 mA	PNP	500 mV	250

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.28
Mouser	N/A	4000	$ 0.28

General part information

BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 4.0PF

Technical documentation and resources