Discrete Semiconductor Products

CDBDSC3650-G

Obsolete

DIODE SIL CARBIDE 650V 11A DPAK

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARBIDE 650V 11A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CDBDSC3650-G

Capacitance @ Vr, F	181 pF
Current - Average Rectified (Io)	11 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Mounting Type	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Speed
Comchip Technology CDBDSC3650-G	Surface Mount	0 ns	181 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	11 A	1.7 V	175 ░C	-55 °C	100 µA	650 V	SiC (Silicon Carbide) Schottky	DPAK	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 11A Surface Mount DPAK

Technical documentation and resources

No documents available