Discrete Semiconductor Products
SH8J65TB1
ActiveRohm Semiconductor
MOSFET, DUAL P-CH, 30V, 7A, 150DEG C, 2W ROHS COMPLIANT: YES
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Discrete Semiconductor Products
SH8J65TB1
ActiveRohm Semiconductor
MOSFET, DUAL P-CH, 30V, 7A, 150DEG C, 2W ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SH8J65TB1 |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | 8-SOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SH8J65 Series
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources