IGD06N60TATMA1
ActiveTHE IGD06N60T IS A 600 V, 6 A IGBT DISCRETE IN TO252 PACKAGE
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IGD06N60TATMA1
ActiveTHE IGD06N60T IS A 600 V, 6 A IGBT DISCRETE IN TO252 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | IGD06N60TATMA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Gate Charge | 42 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 88 W |
| Supplier Device Package | PG-TO252-3-11 |
| Switching Energy | 200 µJ |
| Td (on/off) @ 25°C | 9 ns, 130 ns |
| Vce(on) (Max) @ Vge, Ic | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IGD06N Series
Hard-switching 600 V, 6 A singleTRENCHSTOP™IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.