Discrete Semiconductor Products
R6511KNXC7G
ActiveRohm Semiconductor
650V 11A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
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Discrete Semiconductor Products
R6511KNXC7G
ActiveRohm Semiconductor
650V 11A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | R6511KNXC7G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 53 W |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6511KNX Series
R6511KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources