Discrete Semiconductor Products

BYV28-200-TAP

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DIODE AVALANCHE 200V 3.5A SOD64

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Discrete Semiconductor Products

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DIODE AVALANCHE 200V 3.5A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	BYV28-200-TAP

Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Reverse Recovery Time (trr)	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division BYV28-050-TR	30 ns	200 mA 500 ns	Through Hole	175 ░C	-55 C	Axial SOD-64	1 µA	1.1 V	SOD-64	Avalanche	50 V
Vishay General Semiconductor - Diodes Division BYV28-100-TAP	30 ns	200 mA 500 ns	Through Hole	175 ░C	-55 C	Axial SOD-64	1 µA	1.1 V	SOD-64	Avalanche	100 V
Vishay General Semiconductor - Diodes Division BYV28-200-RAS15-10	30 ns	200 mA 500 ns	Through Hole	175 ░C	-55 C	Axial SOD-64	1 µA	1.1 V	SOD-64	Avalanche	200 V
Vishay General Semiconductor - Diodes Division BYV28-150-TAP	30 ns	200 mA 500 ns	Through Hole	175 ░C	-55 C	Axial SOD-64	1 µA	1.1 V	SOD-64	Avalanche
Vishay General Semiconductor - Diodes Division BYV28-200-TAP	30 ns	200 mA 500 ns	Through Hole	175 ░C	-55 C	Axial SOD-64	1 µA	1.1 V	SOD-64	Avalanche	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 3.5A Through Hole SOD-64

Technical documentation and resources