Discrete Semiconductor Products

PMPB85ENEA/FX

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MOSFET N-CH 60V 4.4A 6DFN

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Discrete Semiconductor Products

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MOSFET N-CH 60V 4.4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB85ENEA/FX

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Qualification	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type
Freescale Semiconductor - NXP PMPB85ENEA/FX	AEC-Q101	95 mOhm	-55 °C	150 °C	DFN2020MD-6	MOSFET (Metal Oxide)	9.2 nC	20 V	2.7 V	60 V	Surface Mount	4.5 V 10 V	305 pF	Automotive	6-UDFN Exposed Pad	4.4 A	N-Channel

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General part information

N-Channel 60 V 4.4A (Ta) 1.6W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources