Specification	SSM6N55NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

SSM6N55NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 4.0 A, 0.046 Ω@10V, SOT-1118(UDFN6)

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Operating Temperature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration
Toshiba Semiconductor and Storage SSM6N55NU,LF	280 pF	MOSFET (Metal Oxide)	6-µDFN (2x2)	150 °C	2.5 V	4 A	2.5 nC	1 W	30 V	Logic Level Gate	Surface Mount	46 mOhm	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 4.0 A, 0.046 Ω@10V, SOT-1118(UDFN6)

Technical documentation and resources