Discrete Semiconductor Products

SISF02DN-T1-GE3

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MOSFET 2N-CH 25V 30.5A/60A PPAK

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 30.5A/60A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISF02DN-T1-GE3

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	60 A, 30.5 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SCD
Power - Max	5.2 W, 69.4 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PowerPAK® 1212-8SCD
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Power - Max	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SISF02DN-T1-GE3	PowerPAK® 1212-8SCD	3.5 mOhm	2650 pF	Surface Mount	2 N-Channel (Dual) Common Drain	5.2 W 69.4 W	30.5 A 60 A	25 V	2.3 V	-55 °C	150 °C	PowerPAK® 1212-8SCD	MOSFET (Metal Oxide)	56 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 30.5A (Ta), 60A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Technical documentation and resources