Discrete Semiconductor Products

VBO160-08NO7

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BIPOLAR MODULE - DIODE PWS-E/ BOX

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Discrete Semiconductor Products

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BIPOLAR MODULE - DIODE PWS-E/ BOX

Technical Specifications

Parameters and characteristics for this part

Specification	VBO160-08NO7

Current - Average Rectified (Io)	174 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	PWS-E
Supplier Device Package	PWS-E
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.07 V
Voltage - Peak Reverse (Max)	800 V

Bipolar Module - Diode PWS-E

Part	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Package / Case	Voltage - Peak Reverse (Max)	Voltage - Forward (Vf) (Max) @ If
LITTELFUSE VBO160-16NO7	PWS-E	Single Phase	174 A	300 µA	-40 °C	150 °C	Chassis Mount	Standard	PWS-E	1.6 kV
LITTELFUSE VBO160-08NO7	PWS-E	Single Phase	174 A	200 µA	-40 °C	150 °C	Chassis Mount	Standard	PWS-E	800 V	1.07 V
LITTELFUSE VBO160-18NO7	PWS-E	Single Phase	174 A	300 µA	-40 °C	150 °C	Chassis Mount	Standard	PWS-E	1.8 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources