Discrete Semiconductor Products

PJE8439_R1_00001

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60V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8439_R1_00001

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	51 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]
Panjit International Inc. PJE8439_R1_00001	2.5 V 10 V	60 V	2.5 V	1.1 nC	SOT-523	20 V	200 mA	P-Channel	51 pF	MOSFET (Metal Oxide)	4 Ohm	SOT-523	Surface Mount	150 °C	-55 °C	300 mW

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General part information

P-Channel 60 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources