IXYA20N120C4HV-TRL

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DISC. IGBT XPT-GENX4 TO-263HV

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Discrete Semiconductor Products

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DISC. IGBT XPT-GENX4 TO-263HV

Technical Specifications

Parameters and characteristics for this part

Specification	IXYA20N120C4HV-TRL

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Part	Mounting Type	Vce(on) (Max) @ Vge, Ic	Gate Charge	Test Condition	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector (Ic) (Max)	Power - Max [Max]	Td (on/off) @ 25°C	Switching Energy	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	IGBT Type
IXYS IXYA20N65C3	Surface Mount	2.5 V	30 nC	15 V 20 A 20 Ohm 400 V	105 A	650 V	34 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	TO-263AA	20 A	230 W	19 ns 80 ns
IXYS IXYA20N65C3D1	Surface Mount	2.5 V	30 nC	15 V 20 A 20 Ohm 400 V	105 A	650 V	34 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	TO-263AA	50 A	200 W	19 ns 80 ns
IXYS IXYA20N120C3HV	Surface Mount	3.4 V	53 nC	10 Ohm 15 V 20 A 600 V	96 A		29 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	TO-263HV		278 W	20 ns 90 ns	1 mJ 1.3 mJ	40 A	1200 V
IXYS IXYA20N120C4HV	Surface Mount	2.5 V	44 nC	10 Ohm 15 V 20 A 960 mV	120 A		53 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	TO-263HV		375 W	14 ns	1 mJ 4.4 mJ	68 A	1200 V	160 ns	PT
IXYS IXYA20N120C4HV-TRL

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General part information

IGBT

Technical documentation and resources

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