Discrete Semiconductor Products

FDI3652

Obsolete

MOSFET N-CH 100V 9A/61A I2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 9A/61A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDI3652

Current - Continuous Drain (Id) @ 25°C	61 A, 9 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2880 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDI3652	-55 °C	175 ░C	MOSFET (Metal Oxide)	16 mOhm	6 V 10 V	N-Channel	20 V	100 V	Through Hole	150 W	9 A 61 A	TO-262 (I2PAK)	4 V	2880 pF	I2PAK TO-262-3 Long Leads TO-262AA	53 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources