Discrete Semiconductor Products

BUK965R8-100E,118

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MOSFET N-CH 100V 120A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK965R8-100E,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	133 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	17460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	357 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Qualification	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP BUK965R8-100E,118	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.8 mOhm	100 V	5 V	Surface Mount	357 W	10 V	133 nC	MOSFET (Metal Oxide)	AEC-Q101	2.1 V	120 A	Automotive	-55 °C	175 ░C	D2PAK	17460 pF

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General part information

N-Channel 100 V 120A (Tc) 357W (Tc) Surface Mount D2PAK

Technical documentation and resources