Discrete Semiconductor Products

BCV26,235

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TRANS PNP DARL 30V 0.5A TO236AB

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Discrete Semiconductor Products

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TRANS PNP DARL 30V 0.5A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BCV26,235

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20000
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Qualification	Operating Temperature	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Mounting Type
Freescale Semiconductor - NXP BCV26,215	TO-236AB	100 nA	AEC-Q101	150 °C	1 V	PNP - Darlington	Automotive	30 V	20000	500 mA	250 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount
Freescale Semiconductor - NXP BCV26,235	TO-236AB	100 nA	AEC-Q101	150 °C	1 V	PNP - Darlington	Automotive	30 V	20000	500 mA	250 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP - Darlington 30 V 500 mA 220MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources