RURU15060

Obsolete

DIODE GEN PURP 600V 150A TO218

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 150A TO218

Technical Specifications

Parameters and characteristics for this part

Specification	RURU15060

Current - Average Rectified (Io)	150 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-218-1
Speed	200 mA, 500 ns
Supplier Device Package	TO-218
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case
ON Semiconductor RURU15060	TO-218	Through Hole	150 A	200 mA 500 ns	175 ░C	-65 C	Standard	250 µA	1.6 V	600 V	TO-218-1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 150A Through Hole TO-218

Technical documentation and resources