Discrete Semiconductor Products

AOB66616L

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MOSFET N-CH 60V 38.5A/140A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 60V 38.5A/140A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB66616L

Current - Continuous Drain (Id) @ 25°C	140 A, 38.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	8.3 W, 125 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Mounting Type
Alpha & Omega Semiconductor Inc. AOB66616L	N-Channel	TO-263 (D2PAK)	2870 pF	150 °C	-55 °C	60 V	3.2 mOhm	3.4 V	38.5 A 140 A	6 V 10 V	8.3 W 125 W	MOSFET (Metal Oxide)	60 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount

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General part information

N-Channel 60 V 38.5A (Ta), 140A (Tc) 8.3W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources