Discrete Semiconductor Products

SIA431DJ-T1-GE3

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MOSFET P-CH 20V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA431DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIA431DJ-T1-GE3	850 mV	8 V	-55 °C	150 °C	Surface Mount	1700 pF	PowerPAK® SC-70-6	12 A	20 V	MOSFET (Metal Oxide)	3.5 W 19 W	1.5 V 4.5 V	PowerPAK® SC-70-6	P-Channel	60 nC	25 mOhm

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General part information

P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources