Discrete Semiconductor Products

AS3D030065C

Active

650V,30A SILICON CARBIDE SCHOTTK

Discrete Semiconductor Products

Active

650V,30A SILICON CARBIDE SCHOTTK

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D030065C

Capacitance	1805 pF
Current - Average Rectified (Io)	35 A
Current - Reverse Leakage	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-2
Package Name	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.8 V

Part	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Capacitance	Technology
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030065C	TO-247-2	175 °C	-55 °C	650 V	1.8 V	20 µA	35 A	0 ns	Through Hole	TO-247-2	500 mA	No Recovery Time	500 mA 500 mA	1805 pF	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 650 V 35A Through Hole TO-247-2

Technical documentation and resources