Discrete Semiconductor Products

BCX56-10,115

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BCX56-Q SERIES - 80 V, 1 A NPN MEDIUM POWER TRANSISTORS@EN-US SOT-89 3-PIN

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Discrete Semiconductor Products

Active

BCX56-Q SERIES - 80 V, 1 A NPN MEDIUM POWER TRANSISTORS@EN-US SOT-89 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BCX56-10,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1.25 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Freescale Semiconductor - NXP BCX56-16,135	1 A	500 mV	150 °C	1.25 W	100 nA	180 MHz	TO-243AA	NPN	100	80 V	Surface Mount
Freescale Semiconductor - NXP BCX56-10,135	1 A	500 mV	150 °C	1.25 W	100 nA	180 MHz	TO-243AA	NPN	63 hFE	80 V	Surface Mount
Freescale Semiconductor - NXP BCX56,115	1 A	500 mV	150 °C	1.25 W	100 nA	180 MHz	TO-243AA	NPN	63 hFE	80 V	Surface Mount
Freescale Semiconductor - NXP BCX56-10,115	1 A	500 mV	150 °C	1.25 W	100 nA	180 MHz	TO-243AA	NPN	63 hFE	80 V	Surface Mount

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General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 1.25 W Surface Mount SOT-89

Technical documentation and resources