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D2PAK
Discrete Semiconductor Products

NTB30N06T4G

Obsolete
ON Semiconductor

MOSFET N-CH 60V 27A D2PAK

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D2PAK
Discrete Semiconductor Products

NTB30N06T4G

Obsolete
ON Semiconductor

MOSFET N-CH 60V 27A D2PAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTB30N06T4G
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds1200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)88.2 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NTB30N06L Series

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Documents

Technical documentation and resources

No documents available