Discrete Semiconductor Products

PMV20XNER

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PMV20XNE - 30 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

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Discrete Semiconductor Products

Active

PMV20XNE - 30 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMV20XNER

Current - Continuous Drain (Id) @ 25°C	5.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	6.94 W, 510 mW
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMV20ENR	6 A	20 V	MOSFET (Metal Oxide)	2 V	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	30 V	21 mOhm	Surface Mount	TO-236AB	10.8 nC	435 pF	6.94 W 510 mW	N-Channel	4.5 V 10 V
Freescale Semiconductor - NXP PMV20XNER	5.7 A	12 V	MOSFET (Metal Oxide)	900 mV	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	30 V	23 mOhm	Surface Mount	TO-236AB		1150 pF	6.94 W 510 mW	N-Channel	1.8 V 4.5 V	18.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB

Technical documentation and resources