Discrete Semiconductor Products

RJK03M6DNS-00#J5

Obsolete

MOSFET N-CH 30V 16A 8HWSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 16A 8HWSON

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M6DNS-00#J5

Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	12.5 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Mounting Type
Renesas Electronics Corporation RJK03M6DNS-00#J5	8-HWSON (3.3x3.3)	150 °C	30 V	8-PowerWDFN	7.1 nC	9.2 mOhm	12.5 W	1190 pF	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	20000	$ 0.73

General part information

The RJK03M6DNS is a N Channel Power MOSFET.

Technical documentation and resources