Discrete Semiconductor Products

RDD023N50TL

LTB

MOSFET N-CH 500V 2A CPT3

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 2A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RDD023N50TL

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	151 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	5.4 Ohm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Supplier Device Package	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature
Rohm Semiconductor RDD023N50TL	151 pF	2 A	MOSFET (Metal Oxide)	20 W	CPT3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	10 V	11 nC	20 V	500 V	5.4 Ohm	2 V	Surface Mount	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 2A (Tc) 20W (Tc) Surface Mount CPT3

Technical documentation and resources

No documents available