Specification	UCC27311ADRCR

Channel Type	Independent
Current - Peak Output (Source, Sink)	3.7 A, 4.5 A
Driven Configuration	Half-Bridge
Gate Type	MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	120 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	1.7 V, 1.9 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	10-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	7.2 ns
Rise / Fall Time (Typ) [custom]	5.5 ns
Supplier Device Package	10-VSON (3x3)
Voltage - Supply [Max]	17 V
Voltage - Supply [Min]	8 V

UCC27311A Series

120V 4A half-bridge driver with 8V UVLO and enable

Part	Package / Case	Channel Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Gate Type	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Peak Output (Source, Sink)	Logic Voltage - VIL, VIH	Mounting Type	Driven Configuration	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]
Texas Instruments UCC27311ADRCR	10-VFDFN Exposed Pad	Independent	8 V	17 V	Non-Inverting	MOSFET (N-Channel)	10-VSON (3x3)	7.2 ns	5.5 ns	125 °C	-40 C	3.7 A 4.5 A	1.7 V 1.9 V	Surface Mount	Half-Bridge	2	120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.09
Texas Instruments	LARGE T&R	1	$ 1.55
		100	$ 1.28
		250	$ 0.92
		1000	$ 0.69

Description

General part information

UCC27311A Series

The UCC27311A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.