Discrete Semiconductor Products

EMD5DXV6T1

Obsolete

TRANS PREBIAS 1NPN 1PNP SOT-563

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS 1NPN 1PNP SOT-563

Technical Specifications

Parameters and characteristics for this part

Specification	EMD5DXV6T1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 hFE
DC Current Gain (hFE) (Min) @ Ic, Vce	80 hFE
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Resistor - Base (R1)	4.7 kOhms, 47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms, 10 kOhms
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Supplier Device Package	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
ON Semiconductor EMD5DXV6T1	10 kOhms 47000 Ohms	SOT-563	4.7 kOhms 47 kOhms	250 mV	Surface Mount	20 hFE	80 hFE	100 mA	1 NPN 1 PNP	SOT-563 SOT-666	50 V	500 nA	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Technical documentation and resources