Discrete Semiconductor Products

JANTXV2N6249

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TRANS NPN 200V 10A TO3

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Discrete Semiconductor Products

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TRANS NPN 200V 10A TO3

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV2N6249

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-3
Power - Max [Max]	6 W
Qualification	MIL-PRF-19500/510
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Grade	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type
Microsemi Corporation JANTXV2N6249T1	200 °C	-65 °C	MIL-PRF-19500/510	Military	Through Hole	200 V	10	1.5 V	6 W	TO-254AA	TO-254-3 TO-254AA	1 mA	NPN
Microsemi Corporation 2N6249T1	200 °C	-65 ░C			Through Hole	200 V	10	1.5 V	6 W	TO-254AA	TO-254-3 TO-254AA	1 mA	NPN
Microsemi Corporation JAN2N6249	200 °C	-65 °C	MIL-PRF-19500/510	Military	Through Hole	200 V	10	1.5 V	6 W		TO-3	1 mA	NPN
Microsemi Corporation JANTXV2N6249	200 °C	-65 °C	MIL-PRF-19500/510	Military	Through Hole	200 V	10	1.5 V	6 W		TO-3	1 mA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 200 V 10 A 6 W Through Hole TO-3 (TO-204AA)

Technical documentation and resources

No documents available