VS-GT50TP60N

Obsolete

IGBT MOD 600V 85A 208W INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 600V 85A 208W INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GT50TP60N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	85 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	3.03 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	175 °C
Package / Case	INT-A-PAK (3 + 4)
Power - Max [Max]	208 W
Supplier Device Package	INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	NTC Thermistor	Input	Configuration	Vce(on) (Max) @ Vge, Ic	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Cies) @ Vce	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-GT50LA65UF	650 V	Chassis Mount	40 µA	163 W	59 A	SOT-227-4 miniBLOC	SOT-227		Standard	Single Chopper	2.1 V	Trench Field Stop	-40 C	175 °C
Vishay General Semiconductor - Diodes Division VS-GT50TP60N		Chassis Mount	1 mA	208 W	85 A	INT-A-PAK (3 + 4)	INT-A-PAK		Standard	Half Bridge	2.1 V	Trench			3.03 nF	175 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Half Bridge 600 V 85 A 208 W Chassis Mount INT-A-PAK

Technical documentation and resources