Discrete Semiconductor Products

CSICD10-1200 TR13

Obsolete

DIODE SIL CARBIDE 1.2KV 10A DPAK

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARBIDE 1.2KV 10A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CSICD10-1200 TR13

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case
Central Semiconductor Corp CSICD10-1200 TR13	Surface Mount	DPAK	1.7 V	175 ░C	-55 °C	500 mA	500 pF	10 A	250 µA	SiC (Silicon Carbide) Schottky	0 ns	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 1200 V 10A Surface Mount DPAK

Technical documentation and resources