Discrete Semiconductor Products

VS-3EMU06-M3/5AT

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DIODE GEN PURP 600V 3A DO214AC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 3A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-3EMU06-M3/5AT

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	41 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-3EMU06-M3/5AT	600 V	175 ░C	-55 °C	Standard	3 A	Surface Mount	200 mA 500 ns	1.7 V	3 µA	DO-214AC SMA	41 ns	DO-214AC (SMA)

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General part information

Diode 600 V 3A Surface Mount DO-214AC (SMA)

Technical documentation and resources