Discrete Semiconductor Products

SQJ401EP-T1_GE3

Active

MOSFET P-CH 12V 32A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 12V 32A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ401EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10015 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs (Max)	Qualification	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SQJ401EP-T2_GE3	6 mOhm	10015 pF	2.5 V 4.5 V	P-Channel	Surface Mount	8 V	AEC-Q101	12 V	Automotive	32 A	-55 °C	175 ░C	PowerPAK® SO-8	164 nC	MOSFET (Metal Oxide)	1.5 V	83 W	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SQJ401EP-T1_GE3	6 mOhm	10015 pF	2.5 V 4.5 V	P-Channel	Surface Mount	8 V	AEC-Q101	12 V	Automotive	32 A	-55 °C	175 ░C	PowerPAK® SO-8	164 nC	MOSFET (Metal Oxide)	1.5 V	83 W	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources