Discrete Semiconductor Products

MER502T_T0_00601

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Panjit International Inc.

DIODE GEN PURP 200V 5A TO220AC

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Discrete Semiconductor Products

Active

Panjit International Inc.

DIODE GEN PURP 200V 5A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MER502T_T0_00601

Capacitance @ Vr, F	51 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Capacitance @ Vr, F	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Panjit International Inc. MER502T_T0_00601	1 µA	35 ns	TO-220-2	51 pF	5 A	Through Hole	950 mV	TO-220AC	200 mA 500 ns	175 ░C	-55 C	Standard	200 V

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General part information

Diode 200 V 5A Through Hole TO-220AC

Technical documentation and resources