Discrete Semiconductor Products

PMV27UPER

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PMV27UPE - 20 V, P-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

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Discrete Semiconductor Products

Active

PMV27UPE - 20 V, P-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMV27UPER

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	490 mW, 4.15 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMV27UPER	MOSFET (Metal Oxide)	8 V	1.8 V 4.5 V	950 mV	TO-236AB	SC-59 SOT-23-3 TO-236-3	Surface Mount	32 mOhm	4.5 A	P-Channel	4.15 W 490 mW	22.1 nC	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

Technical documentation and resources