Discrete Semiconductor Products

FJN3310RTA

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	FJN3310RTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Resistor - Base (R1)	10 kOhms
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Mounting Type	Supplier Device Package	Transistor Type	Frequency - Transition
ON Semiconductor FJN3314RBU	100 mA	50 V	68	300 mV	TO-226-3 TO-92-3	100 nA	4.7 kOhms	47000 Ohms	Through Hole	TO-92-3	NPN - Pre-Biased	250 MHz
ON Semiconductor FJN3310RTA	100 mA	40 V	100	300 mV	TO-226-3 TO-92-3	100 nA	10 kOhms		Through Hole	TO-92-3	NPN - Pre-Biased	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	11539	$ 0.03

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

Technical documentation and resources

No documents available