Discrete Semiconductor Products
RGTVX6TS65DGC13
ActiveRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 80A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGTVX6TS65DGC13
ActiveRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 80A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGTVX6TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 144 A |
| Current - Collector Pulsed (Icm) | 144 A |
| Gate Charge | 171 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 404 W |
| Reverse Recovery Time (trr) | 109 ns |
| Supplier Device Package | TO-247GE |
| Switching Energy | 2.65 mJ, 1.8 mJ |
| Td (on/off) @ 25°C | 45 ns, 201 ns |
| Test Condition | 400 V, 80 A, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGTVX6TS65D Series
RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
Documents
Technical documentation and resources