
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PUMF11,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80, 120 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 300 mW |
| Qualification | AEC-Q100 |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Supplier Device Package | 6-TSSOP |
| Transistor Type | 1 PNP, 1 NPN Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200 mV, 150 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V, 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PUMF11 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP
Documents
Technical documentation and resources