Discrete Semiconductor Products

SICRB12650

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DIODE SIL CARBIDE 650V 12A D2PAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 12A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICRB12650

Capacitance @ Vr, F	750 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	D2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Technology	Capacitance @ Vr, F	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
SMC Diode Solutions SICRB12650	150 µA	650 V	175 ░C	-55 °C	500 mA	Surface Mount	SiC (Silicon Carbide) Schottky	750 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	0 ns	D2PAK	12 A	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 12A Surface Mount D2PAK

Technical documentation and resources