Discrete Semiconductor Products

SQJB40EP-T1_GE3

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MOSFET 2N-CH 40V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJB40EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	34 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Grade	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration	Technology	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJB40EP-T1_GE3	PowerPAK® SO-8 Dual	35 nC	PowerPAK® SO-8 Dual	8 mOhm	1900 pF	-55 °C	175 ░C	2.5 V	Automotive	34 W	40 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	AEC-Q101	Surface Mount	30 A

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General part information

Mosfet Array 40V 30A (Tc) 34W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources