Discrete Semiconductor Products

TSM2N7000KCT A3G

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MOSFET N-CHANNEL 60V 300MA TO92

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Discrete Semiconductor Products

Unknown

MOSFET N-CHANNEL 60V 300MA TO92

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2N7000KCT A3G

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power Dissipation (Max)	400 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs (Max)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Taiwan Semiconductor Corporation TSM2N7000KCT A3G	MOSFET (Metal Oxide)	5 Ohm	300 mA	60 V	N-Channel	150 °C	-55 °C	TO-92	20 V	Through Hole	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	2.5 V	0.4 nC	400 mW	60 pF	5 V 10 V

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General part information

N-Channel 60 V 300mA (Ta) 400mW (Ta) Through Hole TO-92

Technical documentation and resources