Discrete Semiconductor Products

BUK6Y61-60PX

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MOSFET P-CH 60V 25A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET P-CH 60V 25A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6Y61-60PX

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	66 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	61 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Grade	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Qualification	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)
Freescale Semiconductor - NXP BUK6Y61-60PX	30 nC	Automotive	1060 pF	LFPAK56 Power-SO8	AEC-Q101	66 W	25 A	-55 °C	175 ░C	P-Channel	3 V	61 mOhm	SC-100 SOT-669	MOSFET (Metal Oxide)	4.5 V 10 V	60 V	Surface Mount	20 V

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General part information

P-Channel 60 V 25A (Tc) 66W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources