Discrete Semiconductor Products

SI4340CDY-T1-E3

Obsolete

MOSFET 2N-CH 20V 14.1A 14SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 14.1A 14SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4340CDY-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	20 A
Current - Continuous Drain (Id) @ 25°C [Min]	14.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	5.4 W, 3 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Mounting Type	Configuration	Power - Max	Package / Case [x]	Package / Case [y]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4340CDY-T1-E3	32 nC	Logic Level Gate	MOSFET (Metal Oxide)	1300 pF	20 V	-55 °C	150 °C	14.1 A	20 A	Surface Mount	2 N-Channel (Dual)	3 W 5.4 W	0.154 in	3.9 mm	14-SOIC	3 V	9.4 mOhm

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General part information

Mosfet Array 20V 14.1A, 20A 3W, 5.4W Surface Mount 14-SOIC

Technical documentation and resources

No documents available